onsemi has released its EliteSiC metal-oxide semiconductor field-effect transistors (MOSFETs) in the industry-standard T2PAK top-cool package, targeting improved thermal performance and design flexibility for EVs, solar infrastructure and energy storage systems. The new offering combines onsemi’s silicon carbide technology with top-cool packaging.
The initial lineup features 650-volt and 950-volt EliteSiC MOSFETs housed in T2PAK packaging. These devices prioritize thermal efficiency by channeling heat directly into the system’s heatsink, bypassing the printed circuit board’s thermal limitations. According to onsemi, this enables superior thermal performance, higher power density, compact system design, and reduced operating temperatures—all critical factors for engineers designing next-generation EV powertrains, on-board chargers and high-density inverters.
The T2PAK top-cool package is designed to directly couple the MOSFET to the application’s heatsink, minimizing junction-to-heatsink thermal resistance. The initial range supports Rds(on) options from 12 milliohms to 60 milliohms, offering flexibility for power electronics design. The approach also helps maintain low stray inductance, supporting fast switching speeds and reduced energy loss.
For EV applications, onsemi highlights benefits such as extended system lifetime due to lower component stress, simplified design for faster time to market, and improved performance for high-density systems.
“Thermal management is one of the most critical challenges facing power systems designers in automotive and industrial markets today,” said Auggie Djekic, Vice President and Head of SiC Division at onsemi. “With our EliteSiC technology and the innovative T2PAK top-cool package, customers can unlock superior thermal performance and design flexibility, empowering them to create next-generation products that stand out in today’s competitive landscape.”
Source: onsemi
Topics: onsemi, Power Electronics
