NoMIS Power has released two new medium-voltage silicon carbide MOSFETs, including its first 1.7 kV device, targeting applications such as grid infrastructure, rail and heavy-duty electrification, industrial drives and marine systems.
The new parts are the N3PT035MP330K (3.3 kV, 35 mΩ, 88 A) and the N3PT100MP170K (1.7 kV, 100 mΩ, 24 A). Both can be sampled in TO-247-4L packages or as bare die. NoMIS says the devices are built on its next-generation planar SiC platform, intended to extend performance from its 1.2 kV MOSFETs into the 1.7 kV and 3.3 kV classes for higher efficiency and higher-frequency operation.
NoMIS is positioning the 1.7 kV MOSFET as a bridge between established 1.2 kV designs and 3.3 kV architectures, enabling efficient power stages around ~1.0 kV-class DC buses used in traction auxiliaries, charging subsystems and industrial power supplies. The company also highlighted operation up to 175°C, +18 V and +20 V gate-drive compatibility, higher dv/dt capability and improved efficiency–ruggedness tradeoffs.
“This is our first 1.7 kV offering—an important transitory node that bridges established 1.2 kV designs to 3.3 kV architectures,” said NoMIS co-founder and CEO Adam Morgan.
Source: NoMIS Power
