Hitachi Energy is collaborating with Pakal Technologies to incorporate Pakal’s IGTO(t) silicon power switch into Hitachi Energy’s high-voltage power module portfolio, starting with devices used in applications including rail, renewables, energy storage and power infrastructure for AI and data centers.
The companies say the work targets a core problem in large-scale electrification: reducing losses in high-voltage power conversion. Pakal claims its IGTO(t) (Insulated Gate Turn-Off Thyristor) technology delivers about 30% lower losses than today’s widely used devices, and 30% lower conduction losses at high current and temperature than IGBTs, while remaining compatible with existing module architectures.
Pakal describes the IGTO(t) as the first new high-voltage silicon power semiconductor since the IGBT was introduced in the 1980s. At the system level, the companies say the performance gains can translate into higher power density, reduced thermal and cooling requirements, and improved efficiency.
“We are pleased to join forces with Pakal Technologies to incorporate its novel IGTO(t) within our semiconductor portfolio,” said Niklas Persson, Managing Director of Hitachi Energy’s Grid Integration business unit. Pakal CEO Ben Quinones said the partnership provides “a long-term partner capable of scaling impact.”
Source: Hitachi Energy
